Datasheet IQE013N04LM6 (Infineon) - 9

OptiMOSTMPower-MOSFET,40V IQE013N04LM6 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge
102 10 20 V 32 V 8 6 25 °C 8 V 150 °C 100 °C
[A]
101
[V] AV I GS V
4 2 100 0 100 101 102 103 0 10 20 30 40 50
t AV[µs] Q gate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=20Apulsed,Tj=25°C;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms
44 43 42
[V]
41
BR(DSS) V
40 39 38-80 -40 0 40 80 120 160 200
T j[°C]
VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.0,2020-07-15 Document Outline Description Table of Contents Maximum ratings Thermal characteristics Electrical characteristics Static characteristics Dynamic characteristics Gate charge characteristics Reverse diode Electrical characteristics diagrams Electrical characteristics diagrams Electrical characteristics diagrams Electrical characteristics diagrams Package Outlines Revision History Trademarks Disclaimer