Datasheet IQE013N04LM6CG (Infineon) - 5
| Производитель | Infineon |
| Описание | OptiMOS Power-MOSFET, 40V |
| Страниц / Страница | 13 / 5 — OptiMOSTMPower-MOSFET,40V IQE013N04LM6CG. Table7Reversediode. Values. … |
| Версия | 02_00 |
| Формат / Размер файла | PDF / 1.4 Мб |
| Язык документа | английский |
OptiMOSTMPower-MOSFET,40V IQE013N04LM6CG. Table7Reversediode. Values. Parameter. Symbol. Unit Note/TestCondition. Min. Typ. Max
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OptiMOSTMPower-MOSFET,40V IQE013N04LM6CG Table7Reversediode Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max.
Diode continuous forward current IS - - 107 A TC=25°C Diode pulse current IS,pulse - - 820 A TC=25°C Diode forward voltage VSD - 0.77 1 V VGS=0V,IF=20A,Tj=25°C Reverse recovery time1) trr - 25 50 ns VR=20V,IF=20A,diF/dt=400A/µs Reverse recovery charge1) Qrr - 62 124 nC VR=20V,IF=20A,diF/dt=400A/µs 1) Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.0,2020-07-15 Document Outline Description Table of Contents Maximum ratings Thermal characteristics Electrical characteristics Static characteristics Dynamic characteristics Gate charge characteristics Reverse diode Electrical characteristics diagrams Electrical characteristics diagrams Electrical characteristics diagrams Electrical characteristics diagrams Package Outlines Revision History Trademarks Disclaimer
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