Datasheet EPC2059 (Efficient Power Conversion) - 4

eGaN® FET DATASHEET
EPC2059
Figure 10: Normalized Threshold Voltage vs. Temperature Figure 11: Safe Operating Area
1.4 1000 1.3 ID = 3 mA 1.2 100 1.1 1. 10 Limited by RDS(on)
– Drain Current (A)
0.9
I D
Pulse Width
Normalized Threshold Voltage
0.8 1 1 ms 100 µs 0.7 10 µs 0.6 0 25 50 75 100 125 150 0.10.1 1 10 100 1000
TJ – Junction Temperature (°C) VDS - Drain-Source Voltage (V) TJ = Max Rated, TC = +25°C, Single Pulse Figure 12: Transient Thermal Response Curves Junction-to-Board
1
Duty Cycle: 0.5 0.2 0.1 PDM Thermal Impedance
0.1
ed 0.05 t1 0.02 t2 ormaliz 0.01 , N Notes: ZθJB Single Pulse Duty Factor: D = t1/t2 Peak TJ = PDM x ZθJB x RθJB + TB
0.0110-5 10-4 10-3 10-2 10-1 1 10+1
tp, Rectangular Pulse Duration, seconds Junction-to-Case
1
Duty Cycle: 0.5 0.2 0.1 PDM Thermal Impedance
0.1
ed 0.05 t1 0.02 t2 ormaliz 0.01 , N Notes: ZθJC Duty Factor: D = t1/t2 Single Pulse Peak TJ = PDM x ZθJC x RθJC + TC
0.0110-6 10-5 10-4 10-3 10-2 10-1 1
tp, Rectangular Pulse Duration, seconds
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