Datasheet DMMT3906W (Diodes) - 3

DMMT3906W Electrical Characteristics
(@TA = +25°C unless otherwise specified)
Characteristic Symbol Min TYP Max Unit Test Condition OFF CHARACTERISTICS
Collector-Base Breakdown Voltage BVCBO -40   V IC = -100µA, IE = 0 Collector-Emitter Breakdown Voltage (Note 9) BVCEO -40   V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO -5.0   V IE = -100µA, IC = 0 Collector Cutoff Current ICEX   -50 nA VCE = -30V, VEB(OFF) = 3.0V Base Cutoff Current IBL   -50 nA VCE = -30V, VEB(OFF) = 3.0V
ON CHARACTERISTICS (Note 9)
60   IC = -100µA, VCE = -1.0V 80   I C = -1.0mA, VCE = -1.0V DC Current Gain hFE 100  300  I C = -10mA, VCE = -1.0V 60  IC = -50mA, VCE = - 1.0V 30  IC = -100mA, VCE = -1.0V  -250 I Collector-Emitter Saturation Voltage V C = -10mA, IB = -1.0mA CE(SAT)   mV -400 IC = -50mA, IB = -5.0mA 0.65 -850 I Base-Emitter Saturation Voltage V C = -10mA, IB = -1.0mA BE(SAT)   mV -950 IC = -50mA, IB = -5.0mA
MATCHING CHARACTERISTICS
DC Current Gain Matching (Note 10) hFE1 / hFE2  1 2 % IC = -2mA, VCE = -5V VBE1 - Base-Emitter Voltage Matching (Note 11)  1 2 mV I V C = -2mA, VCE = -5V BE2 V Collector-Emitter Saturation Voltage (Note 10) CE(SAT)1 /  1 2 % I V C = -10mA, IB = -1.0mA CE(SAT)2 V Base-Emitter Saturation Voltage (Note 10) BE(SAT)1 /  1 2 % IC = -10mA, IB = -1.0mA VBE(SAT)2
SMALL SIGNAL CHARACTERISTICS
Output Capacitance COBO   4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0 Input Capacitance CIBO   10.0 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Input Impedance hIE 2.0  12 kΩ Voltage Feedback Ratio hRE 0.1  10 x 10-4 VCE = 10V, IC = 1.0mA, Small Signal Current Gain f = 1.0kHz hFE 100  400  Output Admittance hOE 3.0  60 µS V Current Gain-Bandwidth Product f CE = -20V, IC = -10mA, T 250   MHz f = 100MHz V Noise Figure NF   4.0 dB CE = -5.0V, IC = -100µA, RS = 1.0kΩ f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time tD   35 ns VCC = -3.0V, IC = -10mA, Rise Time t VBE(OFF) = 0.5V, IB1 = -1.0mA R   35 ns Storage Time tS   225 ns VCC = -3.0V, IC = -10mA, Fall Time t IB1 = IB2 = -1.0mA F   75 ns Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. 10. Is the ratio of one transistor compared to the other transistor. 11. VBE1 - VBE2 is the absolute difference of one transistor compared to the other transistor. DMMT3906W 3 of 6 February 2018 Document number: DS30312 Rev. 13 - 2
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