Datasheet AP63356Q, AP63357Q (Diodes) - 6

AP63356Q/AP63357Q Typical Performance Characteristics
(AP63356Q/AP63357Q @ TA = +25°C, VIN = 12V, VOUT = 5V, BOM = Table 1, unless otherwise specified.) 20 High-Side MOSFET Low-Side MOSFET 18 110 16 100 14 90 80
A)
12
Ω) μ(
70
(m N
10 60
HD
8
ON)( I S
50
DS
6
R
40 4 30 20 2 10 0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Temperature (°C) Temperature (°C) Figure 5. Power MOSFET RDS(ON) vs. Temperature Figure 6. ISHDN vs. Temperature
VIN Rising POR VIN Falling UVLO 3.8 3.7 3.6 3.5
)
3.4
V(
3.3
NI V
3.2 3.1 3.0 2.9 2.8 -50 -25 0 25 50 75 100 125 150
Temperature (°C) Figure 7. VIN Power-On Reset and UVLO vs. Temperature
AP63356Q/AP63357Q 6 of 28 September 2020 Document number: DS41948 Rev. 1 - 2
www.diodes.com
© Diodes Incorporated