Composite Transistors XN04601 (XN4601) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For general amplification 2.90+0.20 –0.05 1.9±0.1 0.16+0.10 –0.06 (0.95) (0.95) ■ Features 4 5 6 • Two elements incorporated into one package +0.25 –0.05 +0.2 –0.3 • Reduction of the mounting area and assembly cost by one half 2.8 ±0.2 1.50 5˚ 0.4 3 2 1 0.30+0.10 –0.05 ■ Basic Part Number (0.65) 0.50+0.10 –0.05 • 2SD0601A (2SD601A) + 2SB0709A (2SB709A) 10˚ ■ +0.2 –0.1 Absolute Maximum Ratings T +0.3 –0.1 a = 25°C 1.1 1.1 Parameter Symbol Rating Unit Tr1 Collector-base voltage V 1: Collector (Tr1) 0 to 0.1 4: Collector (Tr2) CBO 60 V (Emitter open) 2: Base (Tr2) 5: Base (Tr1) 3: Emitter (Tr2) 6: Emitter (Tr1) Collector-emitter voltage VCEO 50 V EIAJ: SC-74 Mini6-G1 Package (Base open) Marking Symbol: 5C Emitter-base voltage VEBO 7 V (Collector open) Internal Connection Collector current IC 100 mA 4 5 6 Peak collector current ICP 200 mA Tr2 Collector-base voltage V − CBO 60 V (Emitter open) Tr2 Tr1 Collector-emitter voltage V − CEO 50 V (Base open) 3 2 1 Maintenance/ Emitter-base voltage V − EBO 7 V (Collector open) Collector current I − C 100 mA Discontinued Peak collector current I − CP 200 mA Overall Total power dissipation PT 300 mW Junction temperature Tj 150 °C Maintenance/Discontinued includes following four Product lifecycle stage. Storage temperature T − stg 55 to +150 °C (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Note) The part number in the parenthesis shows conventional part number. Publication date: February 2004 SJJ00083BED 1
