Источники питания KEEN SIDE

Datasheet SiHH070N60EF (Vishay)

ПроизводительVishay
ОписаниеEF Series Power MOSFET With Fast Body Diode
Страниц / Страница9 / 1 — SiHH070N60EF. EF Series Power MOSFET With Fast Body Diode. FEATURES. …
Формат / Размер файлаPDF / 184 Кб
Язык документаанглийский

SiHH070N60EF. EF Series Power MOSFET With Fast Body Diode. FEATURES. PowerPAK® 8 x 8. APPLICATIONS. PRODUCT SUMMARY

Datasheet SiHH070N60EF Vishay

35 предложений от 13 поставщиков
Силовой МОП-транзистор, N Канал, 600 В, 36 А, 0.061 Ом, PowerPAK, Surface Mount
AllElco Electronics
Весь мир
SIHH070N60EF-T1GE3
от 109 ₽
SIHH070N60EF-T1GE3
Vishay
от 693 ₽
Microfind
Россия
SIHH070N60EF-T1GE3
Vishay
871 ₽
727GS
Весь мир
SIHH070N60EF-T1GE3
Vishay
по запросу
Многослойные керамические конденсаторы от лидеров азиатского рынка

Модельный ряд для этого даташита

Текстовая версия документа

SiHH070N60EF
www.vishay.com Vishay Siliconix
EF Series Power MOSFET With Fast Body Diode FEATURES
Pin 4: drain • 4th generation E series technology
PowerPAK® 8 x 8
• Low figure-of-merit (FOM) Ron x Qg Pin 1: • Low effective capacitance (Co(er)) gate 4 • Reduced switching and conduction losses 1 Pin 2: • Avalanche energy rated (UIS) 2 Kelvin connection • Material categorization: for definitions of compliance 3 Pin 3: source 3 please see www.vishay.com/doc?99912 N-Channel MOSFET
APPLICATIONS
• Server and telecom power supplies • Switch mode power supplies (SMPS)
PRODUCT SUMMARY
• Power factor correction power supplies (PFC) VDS (V) at TJ max. 650 • Lighting RDS(on) typ. (Ω) at 25 °C VGS = 10 V 0.061 - High-intensity discharge (HID) Qg max. (nC) 75 - Fluorescent ballast lighting Qgs (nC) 20 • Industrial Qgd (nC) 17 - Welding Configuration Single - Induction heating - Motor drives - Battery chargers - Solar (PV inverters)
ORDERING INFORMATION
Package PowerPAK 8 x 8 Lead (Pb)-free and halogen-free SiHH070N60EF-T1GE3
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 600 V Gate-source voltage VGS ± 30 TC = 25 °C 36 Continuous drain current (TJ = 150 °C) VGS at 10 V ID TC = 100 °C 23 A Pulsed drain current a IDM 93 Linear derating factor 1.6 W/°C Single pulse avalanche energy b EAS 226 mJ Maximum power dissipation PD 202 W Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Drain-source voltage slope TJ = 125 °C 100 dv/dt V/ns Reverse diode dv/dt d 50
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 4 A c. 1.6 mm from case d. ISD ≤ ID, di/dt = 900 A/μs, starting TJ = 25 °C S20-0109-Rev. B, 02-Mar-2020
1
Document Number: 92290 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ТМ Электроникс. Электронные компоненты и приборы. Скидки, кэшбэк и бесплатная доставка