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Datasheet SiHH070N60EF (Vishay) - 2

ПроизводительVishay
ОписаниеEF Series Power MOSFET With Fast Body Diode
Страниц / Страница9 / 2 — SiHH070N60EF. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL. TYP. MAX. …
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Язык документаанглийский

SiHH070N60EF. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL. TYP. MAX. UNIT. SPECIFICATIONS. PARAMETER SYMBOL. TEST. CONDITIONS MIN. Static

SiHH070N60EF THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP MAX UNIT SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN Static

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SiHH070N60EF
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA 38 50 °C/W Maximum junction-to-case (drain) RthJC 0.48 0.62
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 600 - - V VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = 20 mA - 0.51 - V/°C Gate-source threshold voltage (N) VGS(th) VDS = VGS, ID = 250 μA 3 - 5 V VGS = ± 20 V - - ± 100 nA Gate-source leakage IGSS VGS = ± 30 V - - ± 1 μA VDS = 480 V, VGS = 0 V - - 1 μA Zero gate voltage drain current IDSS VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 2 mA Drain-source on-state resistance RDS(on) VGS = 10 V ID = 15 A - 0.061 0.071 Ω Forward transconductance a gfs VDS = 20 V, ID = 15 A - 10.5 - S
Dynamic
Input capacitance Ciss V - 2647 - GS = 0 V, Output capacitance Coss VDS = 100 V, - 122 - f = 1 MHz Reverse transfer capacitance Crss - 6 - pF Effective output capacitance, energy - 90 - related a Co(er) VDS = 0 V to 480 V, VGS = 0 V Effective output capacitance, time related b Co(tr) - 560 - Total gate charge Qg - 50 75 Gate-source charge Qgs VGS = 10 V ID = 15 A, VDS = 480 V - 20 - nC Gate-drain charge Qgd - 17 - Turn-on delay time td(on) - 36 72 Rise time tr V - 79 119 DD = 480 V, ID = 15 A, ns V Turn-off delay time t GS = 10 V, Rg = 9.1 Ω d(off) - 55 83 Fall time tf - 38 76 Gate input resistance Rg f = 1 MHz 0.3 0.7 1.4 Ω
Drain-Source Body Diode Characteristics
MOSFET symbol Continuous source-drain diode current IS D - - 36 showing the integral reverse A G p - n junction diode Pulsed diode forward current ISM S - - 93 Diode forward voltage VSD TJ = 25 °C, IS = 15 A, VGS = 0 V - - 1.2 V Reverse recovery time trr - 136 272 ns TJ = 25 °C, IF = IS = 15 A, Reverse recovery charge Qrr - 0.9 1.8 μC di/dt = 100 A/μs, VR = 400 V Reverse recovery current IRRM - 12 - A
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS S20-0109-Rev. B, 02-Mar-2020
2
Document Number: 92290 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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