IRG4PH40UDPbF 90% V ge Same type + V ge device asD .U.T. V ce 430µF 90% Ic 80% 10% V ce of Vce Ic D .U .T. Ic 5% Ic td(off) tf t1+ 5µ S E off = V ce ic dt ∫Vce Ic dt Fig. 18a - Test Circuit for Measurement of t1 ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf trr G A T E V O LT A G E D .U .T . trr Ic Q rr = ∫ id dt Ic dt tx 10% +V g + V g tx 10% Irr 10% V cc V cc D U T V O LT A G E V ce A N D C U R R E N T V pk Irr 10% Ic V cc Ipk 90% Ic Ic D IO D E R E C O V E R Y W A V E FO R M S 5% V ce td(on) tr E ∫ t2 on = V ce ie dt Vce Ic dt t4 t1 E rec =∫ Vd id dt Vd Ic dt t3 t1 t2 D IO D E R E V E R S E R E C O V E R Y E N E R G Y t3 t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining E Defining E on, td(on), tr rec, trr, Qrr, Irr 8 www.irf.com
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