Datasheet IRF6775MTRPbF (Infineon) - 5

IRF6775MTRPbF
) Ω 100 140 Ω m( m( V e I GS = 10V c D = 5.6A e n c a n 90 t a s 120 t i s s i e se TJ = 125°C R R n 80 n O 100 O e c e r T c u J = 125°C ru 70 o o S- S 80 - ot ot - - ni ni 60 a a r r D D 60 , ) TJ = 25°C n n 50 o T o ( J = 25°C ( S S D 40 D R R 40 4 6 8 10 12 14 16 0 5 10 15 20 VGS, Gate-to-Source Voltage (V) ID , Drain Current (A)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
On-Resistance vs. Drain Current 15V 140 )J m( I D y 120 g TOP 1.1A L DRIVER r V 1.4A DS enE 100 BOTTOM 11A eh R c G D.U.T + n - VDD a 80 l IAS A av 20V VGS A t 0.01 p Ω e 60 sluP
Fig 15a.
Unclamped Inductive Test Circuit el 40 gniS , 20 V(BR)DSS S AE tp 0 25 50 75 100 125 150 Starting TJ, Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current IAS
Fig 15b.
Unclamped Inductive Waveforms RD VDS VDS VGS 90% D.U.T. RG +-VDD 10% 10V VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % td(on) t t r d(off) tf
Fig 16a.
Switching Time Test Circuit
Fig 16b.
Switching Time Waveforms 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 26, 2014