Datasheet T2035H-8G (STMicroelectronics) - 3

link to page 3 link to page 3 link to page 3 link to page 3
T2035H-8G Characteristics Table 3. Static characteristics Symbol Test conditions Tj Value Unit
VTM (1) ITM = 28 A, tp = 380 µs 25 °C Max. 1.55 V VTO (1) Threshold voltage 150 °C Max. 0.8 V R (1) D Dynamic resistance 150 °C Max. 19 mΩ 25 °C 2 µA VD = VR = VDRM = VRRM Max. IDRM/IRRM 150 °C 6.5 mA VD = VR = 400 V, peak voltage 150 °C Max. 2.8 mA 1. For both polarities of A2 referenced to A1.
Table 4. Thermal resistance Symbol Parameter Value Unit
Rth(j-c) Junction to case (AC) Max. 1.0 °C/W Rth(j-a) Junction to ambient (S (1) CU = 2 cm2) Typ. 45 °C/W 1. Scu : copper pad surface under tab, 35 µm copper thickness on FR4 PCB.
DS13157
-
Rev 3 page 3/12
Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 D²PAK package information 3 Ordering information Revision history