Datasheet IRFP9240, SiHFP9240 (Vishay) - 2

IRFP9240, SiHFP9240
Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 40 Case-to-Sink, Flat, Greased Surface RthCS 0.24 - °C/W Maximum Junction-to-Case (Drain) RthJC - 0.83
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 μA - 200 - - V VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.20 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = - 200 V, VGS = 0 V - - - 100 Zero Gate Voltage Drain Current IDSS μA VDS = - 160 V, VGS = 0 V, TJ = 125 °C - - - 500 Drain-Source On-State Resistance RDS(on) VGS = - 10 V ID = - 7.2 Ab - - 0.50 Ω Forward Transconductance gfs VDS = - 50 V, ID = - 7.2 A 4.2 - - S
Dynamic
Input Capacitance Ciss - 1200 - VGS = 0 V, Output Capacitance Coss VDS = - 25 V, - 370 - pF f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance Crss - 81 - Total Gate Charge Qg - - 44 I Gate-Source Charge Qgs V D = - 11 A, VDS = - 160 V GS = - 10 V - - 7.1 nC see fig. 6 and 13b Gate-Drain Charge Qgd - - 27 Turn-On Delay Time td(on) - 14 - V Rise Time t DD = - 100 V, ID = - 11 A r - 43 - RG = 9.1 Ω, RD= 8.6 Ω, ns Turn-Off Delay Time td(off) see fig. 10b - 39 - Fall Time tf - 38 - Between lead, D Internal Drain Inductance LD - 5.0 - 6 mm (0.25") from package and center of nH G die contact Internal Source Inductance LS - 13 - S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I MOSFET symbol D S - - - 12 showing the A integral reverse G Pulsed Diode Forward Currenta ISM p - n junction diode - - - 48 S Body Diode Voltage VSD TJ = 25 °C, IS = - 12 A, VGS = 0 Vb - - - 5.0 V Body Diode Reverse Recovery Time trr - 250 300 ns TJ = 25 °C, IF = - 11 A, dI/dt = 100 A/μsb Body Diode Reverse Recovery Charge Qrr - 2.9 3.6 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %. www.vishay.com Document Number: 91239 2 S11-0444-Rev. B, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000