Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 200 0.2 160 ID = 250 µA 0.0 120 riance (V) a - 0.2 er (W) V w o P 80 GS(th) - 0.4 V 40 - 0.6 - 0.8 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold VoltageSingle Pulse Power, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ransient e T 0.2 Notes: fectiv 0.1 mal Impedance 0.1 P ed Ef DM Ther 0.05 maliz t1 t2 Nor t1 1. Duty Cycle, D = 0.02 t2 2. Per Unit Base = R thJA = 70 °C/W 3. T (t) JM - TA = PDMZthJA Single Pulse 4. Surface Mounted 0.01 10-3 10-2 10-1 10-4 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ransient e T 0.2 fectiv 0.1 mal Impedance 0.1 ed Ef Ther 0.05 maliz Nor 0.02 Single Pulse 0.01 10-3 10-2 10-1 10-4 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71820. www.vishay.com Document Number: 71820 4 S09-0767-Rev. F, 04-May-09
