BYV26A, BYV26B, BYV26C, BYV26D, BYV26Ewww.vishay.com Vishay Semiconductors
Ultra-Fast Avalanche Sinterglass Diode FEATURES• Glass passivated junction • Hermetically sealed package • Very low switching losses • Low reverse current • High reverse voltage • Material categorization: for definitions of compliance please see 949539 www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS APPLICATIONSclick logo to get started • Switched mode power supplies • High-frequency inverter circuits Models Available
MECHANICAL DATA
Case:SOD-57
Terminals:plated axial leads, solderable per MIL-STD-750, method 2026
Polarity:color band denotes cathode end
Mounting position:any
Weight:approx. 369 mg
ORDERING INFORMATION(Example)
DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITYBYV26E BYV26E-TR 5000 per 10" tape and reel 25 000 BYV26E BYV26E-TAP 5000 per ammopack 25 000
PARTS TABLE PART TYPE DIFFERENTIATION PACKAGEBYV26A VR = 200 V; IF(AV) = 1 A SOD-57 BYV26B VR = 400 V; IF(AV) = 1 A SOD-57 BYV26C VR = 600 V; IF(AV) = 1 A SOD-57 BYV26D VR = 800 V; IF(AV) = 1 A SOD-57 BYV26E VR = 1000 V; IF(AV) = 1 A SOD-57
ABSOLUTE MAXIMUM RATINGS(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNITBYV26A VR = VRRM 200 V BYV26B VR = VRRM 400 V Reverse voltage = repetitive peak reverse See electrical characteristics BYV26C V voltage R = VRRM 600 V BYV26D VR = VRRM 800 V BYV26E VR = VRRM 1000 V Peak forward surge current tp = 10 ms, half sine wave IFSM 30 A Average forward current IF(AV) 1 A Non repetitive reverse avalanche energy I(BR)R = 1 A, inductive load ER 10 mJ Junction and storage temperature range Tj = Tstg -55 to +175 °C Rev. 1.8, 21-Feb-18
1Document Number: 86040 For technical questions within your region:
[email protected],
[email protected],
[email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
