Datasheet BAT85S (Vishay) - 2

BAT85S
www.vishay.com Vishay Semiconductors
TYPICAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified) 200 1000 180 V = 30 V R T = 125 °C j 160 100 140 R = 540 kW thJA 120 T = 25 °C P - Limit j R 100 at 100 % V 10 R 80 60 P - Limit R at 80 % V - Forward Current (mA) 1 R 40 I F 20 - Reverse Power Dissipation (mW) R P 0 0.1 25 50 75 100 125 150 0 0.5 1.0 1.5 15822 T - Junction Temperature (°C) 15824 V - Forward Voltage (V) j F Fig. 1 - Maximum Reverse Power Dissipation vs. Fig. 3 - Forward Current vs. Forward Voltage Junction Temperature 1000 10 9 f = 1 MHz V = V R RRM 8 7 100 6 5 4 10 3 - Reverse Current (µA) - Diode Capacitance (pF) I R D 2 C 1 1 0 25 50 75 100 125 150 0.1 1 10 100 15823 T - Junction Temperature (°C) 15825 V - Reverse Voltage (V) j R Fig. 2 - Reverse Current vs. Junction Temperature Fig. 4 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS
in millimeters (inches):
DO-35 (DO-204AH)
Cathode Identification ] ] 24] 7 0 .0 .015] 6 5 [0 .0 .0 [0 26 min. [1.024] 3.9 max. [0.154] 26 min. [1.024] 0 0 x. [ [ a in. 7 3 1. 1. 3.1 min. [0.120] 6 m 4 m 0. 0. Ø Ø Rev. 6 - Date: 19. December 2011 Document no.: SB-V-3906.04-031(4) 94 9366 Rev. 1.9, 02-Jun-17
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