Datasheet PUSB3BB2DF (Nexperia) - 3

link to page 3 link to page 3 link to page 3 link to page 3 link to page 3
Nexperia PUSB3BB2DF Extremely low clamping low capacitance ESD protection
001aaa630 120 IPP 100 % I 100 % I PP PP; 8 µs 90 % (%) 80 e-t 50 % IPP; 20 µs 40 10 % 0 t tr = 0.6 ns to 1 ns 0 10 20 30 40 t (µs) 30 ns 60 ns 001aaa631
Fig. 2. ESD pulse waveform according to Fig. 1. 8/20 µs pulse waveform according to IEC 61000-4-2 IEC 61000-4-5 and IEC 61643-321 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit
VBR breakdown voltage IR = 1 mA; Tamb = 25 °C - 7.4 - V IRM reverse leakage current VRWM = 4 V; Tamb = 25 °C - 1 50 nA Cd diode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C - 0.26 - pF f = 1 MHz; VR = 1.5 V; Tamb = 25 °C - 0.24 - pF VCL clamping voltage IPPM = 8 A; 8/20 µs; Tamb = 25 °C [1] - 5.3 - V IPPM = 8 A; TLP; tp = 100 ns [2] - 4.5 - V IPPM = 16 A; TLP; tp = 100 ns; [2] - 6.2 - V Tamb = 25 °C Rdyn dynamic resistance IR = 5 A; Tamb = 25 °C [2] - 0.25 - Ω IR = -5 A; Tamb = 25 °C [2] - 0.25 - Ω f-3dB -3 dB cut-off frequency Tamb = 25 °C; normalized to attenuation - > 18 - GHz at 1 MHz [1] Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5. [2] Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008. PUSB3BB2DF All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2020. All rights reserved
Product data sheet 3 November 2020 3 / 15
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Characteristics 10. Application information 11. Package outline 12. Soldering 13. Revision history 14. Legal information Contents