Datasheet MBR0540T3G, NRVB0540T1G, MBR0540T3G, NRVB0540T3G (ON Semiconductor) - 3

MBR0540T1G, NRVB0540T1G, MBR0540T3G, NRVB0540T3G
100E-3 100E-3 10E-3 (AMPS) 10E-3 T (AMPS) J = 100C 1.0E-3 TJ = 125C 1.0E-3 100E-6 100E-6 TJ = 100C 10E-6 10E-6 TJ = 25C , REVERSE CURRENT R 1.0E-6 I T 1.0E-6 J = 25C , MAXIMUM REVERSE CURRENT I R 100E-9 100E-9 0 10 20 30 40 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
0.8 0.45 dc TTS) A 0.40 0.7 SQUARE WAVE dc (AMPS) FREQ = 20 kHz 0.35 0.6 SQUARE WAVE TION (W I A pk/Io = p 0.30 0.5 CURRENT I I pk/Io = p pk/Io = 5 0.25 0.4 ARD I W pk/Io = 10 Ipk/Io = 5 0.20 0.3 FOR 0.15 Ipk/Io = 20 Ipk/Io = 10 0.2 0.10 Ipk/Io = 20 VERAGE VERAGE POWER DISSIP 0.1 , A 0.05 , A I O FO 0 P 0 0 20 40 60 80 100 120 140 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 TL, LEAD TEMPERATURE (C) IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating Figure 6. Forward Power Dissipation
100 126 T 124 J = 25C TURE ( C) Rtja = 118C/W 122 120 TEMPERA ANCE (pF) 118 ACIT TING 149C/W 116 180C/W C, CAP 114 TED OPERA 206C/W 112 , DERA 228C/W 10 T J 110 0 5.0 10 15 20 25 30 35 40 0 5.0 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (VOLTS) VR, DC REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ may be calculated from the equation: TJ = TJmax − r(t)(Pf + Pr) where r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed.
http://onsemi.com 3