Datasheet MBRS540, NRVBS540T3G (ON Semiconductor) - 2

link to page 2 link to page 2 link to page 2 link to page 2 link to page 2
NRVBS540T3G MAXIMUM RATINGS Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 40 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current IF(AV) 5 A (At Rated VR, TC = 105°C) Peak Repetitive Forward Current IFRM 10 A (At Rated VR, Square Wave, 20 KHz, TC = 80°C) Non−Repetitive Peak Surge Current IFSM 190 A (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range Tstg −65 to +150 °C Operating Junction Temperature (Note 1) TJ −65 to +150 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS Characteristic Symbol Value Unit
Thermal Resistance, °C/W Junction−to−Lead (Note 2) RqJL 12 Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 111 2. Rating applies when surface mounted on the minimum pad size recommended.
ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 3) VF V (iF = 5.0 A, TC= 25°C) 0.50 Maximum Instantaneous Reverse Current (Note 3) iR mA (Rated dc Voltage, TC = 25°C) 0.3 (Rated dc Voltage, TC = 100°C) 15 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
www.onsemi.com 2