Datasheet MTP2P50EG (ON Semiconductor) - 6

MTP2P50EG SAFE OPERATING AREA
10 80 V I GS = 20 V D = 2 A SINGLE PULSE 10 ms TC = 25°C 60 O-SOURCE (mJ) (AMPS) 1 100 ms 1 ms 40 10 ms dc 0.1 , DRAIN CURRENT ALANCHE ENERGY V A 20 I D RDS(on) LIMIT THERMAL LIMIT , SINGLE PULSE DRAIN-T PACKAGE LIMIT E AS 0.01 0 0.1 1 10 100 1000 25 50 75 100 125 150 V T DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) J, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy versus Safe Operating Area Starting Junction Temperature
1 D = 0.5 ANCE 0.2 RESIST 0.1 P(pk) 0.1 0.05 RqJC(t) = r(t) RqJC THERMAL 0.02 D CURVES APPLY FOR POWER 0.01 PULSE TRAIN SHOWN , NORMALIZED EFFECTIVE t1 READ TIME AT t1 SINGLE PULSE r(t) t2 TJ(pk) - TC = P(pk) RqJC(t) TRANSIENT DUTY CYCLE, D = t1/t2 0.01 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 t, TIME (s)
Figure 13. Thermal Response
di/dt IS trr ta tb TIME t 0.25 I p S IS
Figure 14. Diode Reverse Recovery Waveform www.onsemi.com 6