link to page 16 NV612886. Specifications6.1. Absolute Maximum Ratings(1) (with respect to Source (pad) unless noted) SYMBOLPARAMETERMAXUNITS VDS (TRAN) Transient Drain-to-Source Voltage(2) 800 V VDS (CONT) Continuous Drain-to-Source Voltage -7 to +650 V V Supply Voltage 30 V CC V PWM Input Pin Voltage -3 to +30 V PWM V V DZ DD Setting Pin Voltage 6.6 V V Drive Supply Voltage 7.5 V DD V Cooling Pad Voltage -10 to +10 V CP I Continuous Drain Current (@ T D C = 100ºC) 20 A I PULSE Pulsed Drain Current (10 µs @ T D J = 25ºC) 40 A I PULSE Pulsed Drain Current (10 µs @ T D J = 125ºC) 25 A dV/dt Slew Rate on Drain-to-Source 200 V/ns T Operating Junction Temperature -55 to 150 ºC J T Storage Temperature -55 to 150 ºC STOR (1) Absolute maximum ratings are stress ratings; devices subjected to stresses beyond these ratings may cause permanent damage. (2) VDS (TRAN) allows for surge ratings during non-repetitive events that are < 100 µs (for example start-up, line interruption) and repetitive events that are < 100 ns (for example repetitive leakage inductance spikes). Refer to Section 8.9 for detailed recommended design guidelines. 6.2. Recommended Operating Conditions (3) SYMBOLPARAMETERMINTYPMAXUNITS V Drive Supply Set Zener Voltage(4) 5.8 6.2 6.6 V DZ IDD_EXT Regulator External Load Current 3.0 mA RDD Gate Drive Turn-On Current Set Resistance(5) 10 25 Ω Min. of V PWM Input Pin Voltage 0 5 PWM (V or 20) V CC VCC Supply Voltage 10 24 V TC Operating Case Temperature -40 125 ºC (3) Exposure to conditions beyond maximum recommended operating conditions for extended periods of time may affect device reliability. (4) Use of Zener diode other than 6.2 V is not recommended. See Table I for recommended part numbers of 6.2 V Zener diodes. (5) RDD resistor must be used. Minimum 10 Ohm to ensure application and device robustness. Final Datasheet3Rev Dec 16, 2020
