Datasheet NVBG015N065SC1 (ON Semiconductor) - 5

NVBG015N065SC1 TYPICAL CHARACTERISTICS
20 10000 ID = 75 A VDD = 390 V Ciss TAGE (V) 15 VDD = 650 V 1000 10 VDD = 520 V Coss ANCE (pF) −SOURCE VOL 5 ACIT 100 −TO CAP TE Crss 0 f = 1 MHz , GA VGS = 0 V V GS −5 10 0 50 100 150 200 250 300 350 0.1 1 10 100 650 Q VDS, DRAIN−TO−SOURCE VOLTAGE (V) g, GATE CHARGE (nC)
Figure 7. Gate−to−Source Voltage vs. Total Figure 8. Capacitance vs. Drain−to−Source Charge Voltage
100 160 VGS = 18 V 120 TJ = 25°C 10 80 VALANCHE CURRENT (A) , DRAIN CURRENT (A) 40 , A I D I AS Typical performance based RqJC = 0.3°C/W on characterization data 1 0 0.001 0.01 0.1 1 25 50 75 100 125 150 175 tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE (°C)
Figure 9. Unclamped Inductive Switching Figure 10. Maximum Continuous Drain Capability Current vs. Case Temperature
1000 100000 Single Pulse RqJC = 0.3°C/W T 100 10 ms C = 25°C 10000 100 ms 10 1 ms 1000 , DRAIN CURRENT (A) 10 ms Single Pulse 1 I D TJ = 175°C , PEAK TRANSIENT POWER (W) RqJC = 0.3°C/W TC = 25°C DC 0.1 P (PK) 100 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) t, PULSE WIDTH (sec)
Figure 11. Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5