Datasheet NTH4L015N065SC1 (ON Semiconductor) - 5

NTH4L015N065SC1 TYPICAL CHARACTERISTICS
20 10000 ID = 75 A Ciss 15 TAGE (V) VDD = 650 V VDD = 390 V 1000 10 VDD = 520 V ANCE (pF) Coss 5 −SOURCE VOL ACIT 100 −TO CAP TE 0 f = 1 MHz C , GA rss VGS = 0 V V GS −50 50 100 150 200 250 300 350 10 0.1 1 10 100 650 Qg, GATE CHARGE (nC) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Gate−to−Source Voltage vs. Total Figure 8. Capacitance vs. Drain−to−Source Charge Voltage
100 160 120 VGS = 18 V TJ = 25°C 10 80 VALANCHE CURRENT (A) , DRAIN CURRENT (A) 40 , A I D I AS RJC = 0.3°C/W 1 0 0.001 0.01 0.1 1 25 50 75 100 125 150 175 tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE (°C)
Figure 9. Unclamped Inductive Switching Figure 10. Maximum Continuous Drain Capability Current vs. Case Temperature
1000 100000 Single Pulse RJC = 0.3°C/W 10 s TC = 25°C 100 10000 100 s 10 1 ms 1000 10 ms , DRAIN CURRENT (A) 1 Single Pulse 10 ms I D TJ = Max Rated DC , PEAK TRANSIENT POWER (W) RJC = 0.3°C/W TC = 25°C P (PK) 0.1 100 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) t, PULSE WIDTH (sec)
Figure 11. Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5