Datasheet VEMD8081 (Vishay) - 2

VEMD8081
www.vishay.com Vishay Semiconductors
BASIC CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 50 mA VF - 2.3 3.3 V Reverse dark current VR = 10 V, E = 0 Iro - 0.5 10 nA VR = 0 V, f = 1 MHz, E = 0 CD - 50 - pF Diode capacitance VR = 3 V, f = 1 MHz, E = 0 CD - 20 40 pF Ee = 1 mW/cm2, λ = 525 nm, VR = 5 V Ira 15 20 24 μA Reverse light current Ee = 1 mW/cm2, λ = 850 nm, VR = 5 V Ira 29 33 38 μA Angle of half sensitivity ϕ - ± 65 - ° Wavelength of peak sensitivity λp - 840 - nm Range of spectral bandwidth λ0.1 - 350 to 1100 - nm Rise time VR = 10 V, RL = 50 Ω, λ = 830 nm tr - 110 - ns Fall time VR = 10 V, RL = 50 Ω, λ = 830 nm tf - 110 - ns
BASIC CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified) Axis Title Axis Title 1000 10000 100 10000 V = 5 V, λ = 850 nm R V = 10 V R ) (nA (μA 100 1000 10 1000 rrent rrent u u C ne ne ne ine ine ne rk 10 a ght C 1st li 2nd li 1st li 2nd l 2nd l 2nd li 100 1 100 everse D everse Li 1 R R - - I ro I ra 0.1 10 0.1 10 20 40 60 80 0.01 0.1 1 T - Ambient Temperature (°C) amb E - Irradiance (mW/cm2) e Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 3 - Reverse Light Current vs. Irradiance Axis Title Axis Title 110 10000 60 10000 ) E = 1 mW/cm2 e f = 1 MHz λ = 850 nm 50 V = 5 V R 105 rrent (% u 1000 40 1000 C ght ne ne ne ne ine 100 tance (pF) 30 ine 1st li 2nd li 1st li 2nd li 2nd l apaci verse Li 2nd l e 100 C 20 100 R - p e 95 v C ati 10 el R - l. 90 10 0 10 , re I ra -40 -20 0 20 40 60 80 0.001 0.01 0.1 1 10 T - Ambient Temperature (°C) V - Reverse Voltage (V) amb R Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Fig. 4 - Diode Capacitance vs. Reverse Voltage Rev. 1.0, 07-Oct-2020
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