Datasheet BDW42G (NPN), BDW46G, BDW47G (PNP) (ON Semiconductor) - 5
Производитель | ON Semiconductor |
Описание | Darlington Complementary Silicon Power Transistors |
Страниц / Страница | 8 / 5 — BDW42G (NPN), BDW46G, BDW47G (PNP). BDW42 (NPN). BDW46, 47 (PNP). Figure … |
Версия | 17 |
Формат / Размер файла | PDF / 239 Кб |
Язык документа | английский |
BDW42G (NPN), BDW46G, BDW47G (PNP). BDW42 (NPN). BDW46, 47 (PNP). Figure 9. DC Current Gain

23 предложений от 15 поставщиков Биполярный транзистор, дарлингтона, NPN, 100 В, 15 А, 85 Вт, TO-220, Through Hole |
| BDW42G ON Semiconductor | 74 ₽ | |
| BDW42G ON Semiconductor | 94 ₽ | |
| BDW42G ON Semiconductor | от 112 ₽ | |
| BDW42G ON Semiconductor | по запросу | |
Модельный ряд для этого даташита
Текстовая версия документа
BDW42G (NPN), BDW46G, BDW47G (PNP) BDW42 (NPN) BDW46, 47 (PNP)
20,000 20,000 VCE = 3.0 V VCE = 3.0 V 10,000 10,000 7000 5000 GAIN T T J = 150°C GAIN 5000 J = 150°C 3000 3000 2000 25°C 2000 25°C , DC CURRENT 1000 , DC CURRENT 1000 FEh -55°C FE 500 h 700 -55°C 500 300 300 200 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 9. DC Current Gain
3.0 TS) 3.0 TS) TJ = 25°C TJ = 25°C 2.6 TAGE (VOL 2.6 IC = 2.0 A 4.0 A 6.0 A TAGE (VOL IC = 2.0 A 4.0 A 6.0 A 2.2 2.2 1.8 OR-EMITTER VOL 1.8 OR-EMITTER VOL 1.4 1.4 , COLLECT , COLLECT CEV 1.0 CE 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 V 1.00.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 10. Collector Saturation Region
3.0 3.0 T T J = 25°C J = 25°C 2.5 2.5 TS) TS) 2.0 2.0 TAGE (VOL TAGE (VOL VBE(sat) @ IC/IB = 250 , VOL 1.5 , VOL 1.5 VBE @ VCE = 4.0 V V V VBE @ VCE = 4.0 V VBE(sat) @ IC/IB = 250 1.0 1.0 VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 11. “On” Voltages www.onsemi.com 5