HMC499 v03.0908 GaAs PHEMT MMIC MEDIUMPOWER AMPLIFIER, 21 - 32 GHzPad Descriptions Pad Number Function Description Interface Schematic This pad is AC coupled 1 RFIN and matched to 50 Ohms 3 Power Supply Voltage for the amplifi er. External bypass 2-4 Vdd1, 2, 3 capacitors of 100 pF and 0.01 μF are required. IP This pad is AC coupled H 5 RFOUT and matched to 50 Ohms. Gate control for amplifi er. Adjust to achieve Idd of 200 mA. S - C Please follow “MMIC Amplifi er Biasing Procedure” 6 Vgg Application Note. External bypass capacitors of 100 pF R and 0.01 μF are required. IE IF Die Bottom GND Die bottom must be connected to RF/DC ground. L P M Assembly Diagram R A E W O R & P A E IN L Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 3 - 60 20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D
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