ADH519S4.0 Specifications 4.1. Absolute Maximum Ratings 1/ Drain Bias Voltage (VDD1, VDD2, VDD3) .. +3.5 Vdc RF Input Power (RFIN) (VDD1 = VDD2 = VDD3 = +3.0 Vdc) 2/ ...……… +20 dBm Channel Temperature .. ... 175°C Continuous Pdiss (T=85°C) .. 1.71 W (derate 19 mW/°C above 85 °C) Thermal Resistance (Channel to package bottom) θJC .. 52.63 °C/W Storage temperature .. -65°C to 150°C ESD Sensitivity (HBM) ... Class 1A 4.2. Recommended Operating Conditions Positive Supply voltage (VDD) ... +2.5 V to +3.5 V Ambient Operating Temperature Range (TA)…………………………. -40°C to +85°C 4.3. Nominal Operating Performance Characteristics 3/ Saturated Output Power (Psat) (17.5-28.5 GHz) ... 10.5 dBm Saturated Output Power (Psat) (28.5-31.5 GHz) ... 14 dBm Input Return Loss (S11) (17.5-28.5 GHz) ... 3.2 dB Input Return Loss (S11) (28.5-31.5 GHz) ... 4 dB Output Return Loss (S22) (17.5-28.5 GHz) ... … 3.5 dB Output Return Loss (S22) (28.5-31.5 GHz) .. … 9 dB Reverse Isolation (S12) (17.5-28.5 GHz) .. … 27 dB Reverse Isolation (S12) (28.5-31.5 GHz).. … 31 dB Dynamic IDD at Psat ... … 95 mA 4.4. Radiation Features Maximum Total Dose Available (dose rate = 50 – 300 rads (Si)/s)…. 100K rads (Si) 1/ Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions outside of those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum ratings for extended periods may affect device reliability. 2/ Frequency = 17.5 GHz - 31.5 GHz 3/ All typical specifications are at TA = 25°C, VDD1 = VDD2, = VDD3 = 3V, unless otherwise noted. ASD0016589 Rev.A | Page 3 of 8
