HMC752LC4 v02.0618 GaAs HEMT MMIC LOW NOISEAMPLIFIER, 24 - 28 GHzGain, Noise Figure & P1dB vs.Power Compression @ 28 GHzSupply Voltage @ 28 GHz 30 28 7 ) % 6 25 24 ( E T A ) m N 20 Gain 5 O ), P 20 B P1dB d IS M B Pout ( d E ( Gain B 16 4 d F PAE IN 1 IG 15 A ), P U 12 3 R ), G B d E m ( 10 ( d E - S B d IN 8 2 B A ) t ( u G IS o 5 P 4 1 Noise Figure O 0 0 0 -25 -20 -15 -10 -5 2.5 3 3.5 INPUT POWER (dBm) Vdd (V) W N O Absolute Maximum Ratings S - L Drain Bias Voltage +4.5V R RF Input Power +12 dBm ELECTROSTATIC SENSITIVE DEVICE IE Gate Bias Voltage -1 to 0.3V OBSERVE HANDLING PRECAUTIONS Channel Temperature 175 °C LIF Continuous Pdiss (T = 85 °C) 0.21 W (derate 6.7 mW/°C above 85 °C) P Thermal Resistance M 148 °C/W (Channel to ground paddle) A Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 4 Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Gain, Noise Figure & P1dB vs. Supply Voltage @ 28 GHz Power Compression @ 28 GHz Reverse Isolation vs. Temperature Psat vs. Temperature P1dB vs. Temperature Output IP3 vs. Idd Output IP3 vs. Temperature Noise Figure vs. Idd Noise Figure vs. Temperature Output Return Loss vs. Temperature Input Return Loss vs. Temperature Gain vs. Idd Gain vs. Temperature P1dB vs. Idd Absolute Maximum Ratings
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