HMC-ALH444 v04.0417 GaAs HEMT MMIC LOW NOISEAMPLIFIER, 1 - 12 GHz 1 Absolute Maximum Ratings Drain Bias Voltage +5.5 Vdc IP ELECTROSTATIC SENSITIVE DEVICE RF Input Power 12 dBm H OBSERVE HANDLING PRECAUTIONS Gate Bias Voltage Vgg1 -1 to 0.3 Vdc Gate Bias Voltage Vgg2 0 to 2.5 Vdc Thermal Resistance E - C 109 °C/W (channel to die bottom) IS Channel Temperature 180 °C O Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ESD Rating Class 0 W N O Outline Drawing S - L R IE LIF P M A Die Packaging Information [1] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. Standard Alternate 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. GP-1 (Gel Pack) [2] 4. BACKSIDE METAL IS GROUND. [1] Refer to the “Packaging Information” section for die 5. BOND PAD METALLIZATION: GOLD. packaging dimensions. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. [2] For alternate packaging information contact Hittite 7. OVERALL DIE SIZE ±.002” Microwave Corporation. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 1 - 3 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
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