Datasheet HMC930A (Analog Devices) - 6

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HMC930A Data Sheet PIN CONFIGURATION AND FUNCTION DESCRIPTIONS 3 4 1 2 ACG ACG RFOUT/V 5 DD HMC930A TOP VIEW (Not to Scale) 2 VGG2 1 RFIN 1 4 3 GGV ACG ACG 8 7 6
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NOTES 1. DIE BOTTOM MUST BE CONNECTED TO RF/DC GROUND.
13738- Figure 2. Pad Configuration
Table 6. Pad Function Descriptions Pad No. Mnemonic Description
1 RFIN RF Input. This pin is dc-coupled and matched to 50 Ω. A blocking capacitor is required on this pin. 2 VGG2 Gate Control 2 for the Amplifier. Attach bypass capacitors as shown in Figure 37. For nominal operation, apply 3.5 V to VGG2. 3 ACG1 Low Frequency Termination 1. Attach bypass capacitors as shown in Figure 37. 4 ACG2 Low Frequency Termination 2. Attach bypass capacitors as shown in Figure 37. 5 RFOUT/V 1 DD RF Output for the Amplifier (RFOUT). DC Bias (VDD). Connect VDD to the bias tee network to provide the drain current (IDD). See Figure 37. 6 ACG3 Low Frequency Termination 3. Attach bypass capacitors as shown in Figure 37. 7 ACG4 Low Frequency Termination 4. Attach bypass capacitors as shown in Figure 37. 8 VGG1 Gate Control 1 for the Amplifier. Attach bypass capacitors as shown in Figure 37. Follow the procedures described in the Biasing Procedures section. Die Bottom GND Die bottom must be connected to RF/dc ground. 1 RFOUT/VDD is a multifunction pad. Rev. A | Page 6 of 16 Document Outline Features Applications Functional Block Diagram General Description Revision History Electrical Specifications DC to 12 GHz Frequency Range 12 GHz to 32 GHz Frequency Range 32 GHz to 40 GHz Frequency Range Total Supply Current by VDD Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Biasing Procedures Mounting and Bonding Techniques for Millimeterwave GaAs MMICs Handling Precautions Mounting Wire Bonding Outline Dimensions Die Packaging Information Ordering Guide