Datasheet HMC8205BF10 (Analog Devices)

0.3 GHz to 6 GHz, 35 W, GaN Power Amplifier Data Sheet HMC8205BF10 FEATURES FUNCTIONAL BLOCK DIAGRAM High PSAT: 46 dBm High power gain: 20 dB High PAE: 38% Instantaneous bandwidth: 0.3 GHz to 6 GHz 1 HMC8205BF10 10 Supply voltage: VDD = 50 V at 1300 mA VDD2 NC 10-lead LDCC package VDD2 NC 2 9 APPLICATIONS 3 8 Military jammers RFIN RFOUT Commercial and military radar 4 7 Power amplifier stage for wireless infrastructure NC VGG1 Test and measurement equipment NC VDD1 5 6 PACKAGE BASE GND
001 13790- Figure 1.
GENERAL DESCRIPTION
The HMC8205BF10 is a gallium nitride (GaN) broadband The HMC8205BF10 is ideal for pulsed or continuous wave power amplifier delivering 45.5 dBm (35 W) with 38% power (CW) applications, such as military jammers, wireless added efficiency (PAE) across an instantaneous bandwidth of infrastructure, radar, and general-purpose amplification. 0.3 GHz to 6 GHz. No external matching is required to achieve The HMC8205BF10 amplifier is a 10-lead ceramic leaded chip ful band operation. Additionally, no external inductor is carrier (LDCC). required to bias the amplifier. Also, dc blocking capacitors for the RFIN and RFOUT pins are integrated into the HMC8205BF10.
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Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications Electrical Specifications Absolute Maximum Ratings Thermal Resistance ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Application Circuit Evaluation PCB Outline Dimensions Ordering Guide