Datasheet HMC8500PM5E (Analog Devices) - 3

Data Sheet HMC8500PM5E SPECIFICATIONS ELECTRICAL SPECIFICATIONS
TA = 25°C, supply voltage (VDD) = 28 V, quiescent current (IDDQ) = 100 mA, and frequency range = 0.01 GHz to 1.3 GHz.
Table 1. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 0.01 1.3 GHz GAIN Small Signal Gain 14.0 20.0 dB Gain Flatness 6 dB RETURN LOSS Input 7 dB Output 7 dB POWER Output Power P 40 dBm Input power (P ) = 28 dBm OUT IN 40 dBm P = 30 dBm IN Power Added Efficiency PAE 55 % P = 28 dBm IN 55 % P = 30 dBm IN OUTPUT THIRD-ORDER INTERCEPT OIP3 47 dBm P per tone = 30 dBm OUT NOISE FIGURE NF 7 dB QUIESCENT CURRENT I 100 mA Adjust the gate bias control voltage (V ) from −8 V DDQ GG to 0 V to achieve I = 100 mA, V = −2.65 V typical DDQ GG to achieve I = 100 mA DDQ SUPPLY VOLTAGE V 24 28 32 V DD TA = 25°C, VDD = 28 V, IDDQ = 100 mA, and frequency range = 1.3 GHz to 2.8 GHz.
Table 2. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 1.3 2.8 GHz GAIN Small Signal Gain 12.0 15.0 dB Gain Flatness 3 dB RETURN LOSS Input 9 dB Output 9 dB POWER Output Power P 39 dBm P = 28 dBm OUT IN 40 dBm P = 30 dBm IN Power Added Efficiency PAE 40 % P = 28 dBm IN 47 % P = 30 dBm IN OUTPUT THIRD-ORDER INTERCEPT OIP3 47 dBm P per tone = 30 dBm OUT NOISE FIGURE NF 4.5 dB QUIESCENT CURRENT I 100 mA Adjust the gate bias control voltage (V ) from −8 V DDQ GG to 0 V to achieve I = 100 mA, V = −2.65 V typical DDQ GG to achieve I = 100 mA DDQ SUPPLY VOLTAGE V 24 28 32 V DD Rev. A | Page 3 of 17 Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications Electrical Specifications Total Supply Current by VDD Absolute Maximum Ratings Thermal Resistance ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Evaluation Board Outline Dimensions Ordering Guide