Datasheet HMC1132PM5E (Analog Devices) - 3

Data Sheet HMC1132PM5E SPECIFICATIONS ELECTRICAL SPECIFICATIONS
TA = 25°C, VDD1 = VDD2 = 5 V, quiescent current (IDDQ) = 650 mA, and frequency range = 27 GHz to 29 GHz, unless otherwise noted.
Table 1. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 27 29 GHz GAIN 19 22 dB Gain Variation over Temperature 0.028 dB/°C RETURN LOSS Input 7 dB Output 9 dB POWER Output Power for 1 dB Compression P1dB 26.5 28.5 dBm Saturated Output Power PSAT 29.5 dBm OUTPUT THIRD-ORDER INTERCEPT IP3 37 dBm Measurement taken at 5 V, 650 mA, output power (POUT) per tone = 20 dBm NOISE FIGURE NF 7 dB SUPPLY VOLTAGE VDD 4 6 V QUIESCENT SUPPLY CURRENT IDDQ 500 750 mA Adjust the gate bias voltage (VGG) from −2 V up to 0 V to achieve desired quiescent current (IDDQ) TA = 25°C, VDD1 = VDD2 = 5 V, quiescent current (IDDQ) = 650 mA, and frequency range = 29 GHz to 32 GHz, unless otherwise noted.
Table 2. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 29 32 GHz GAIN 21 24 dB Gain Variation over Temperature 0.034 dB/°C RETURN LOSS Input 11 dB Output 14 dB POWER Output Power for 1 dB Compression P1dB 27 29 dBm Saturated Output Power PSAT 29.5 dBm OUTPUT THIRD-ORDER INTERCEPT IP3 37 dBm Measurement taken at 5 V, 650 mA, POUT per tone = 20 dBm NOISE FIGURE NF 5.5 dB SUPPLY VOLTAGE VDD 4 6 V QUIESCENT SUPPLY CURRENT IDDQ 500 750 mA Adjust the gate bias voltage (VGG) from −2 V up to 0 V to achieve desired quiescent current (IDDQ) Rev. 0 | Page 3 of 17 Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications Electrical Specifications Absolute Maximum Ratings Thermal Resistance ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Application Circuit Evaluation Board Bill of Materials Evaluation Board Schematic Outline Dimensions Ordering Guide