Data SheetHMC1144ABSOLUTE MAXIMUM RATINGS Table 4. Stresses at or above those listed under Absolute Maximum Parameter Rating Ratings may cause permanent damage to the product. This is a Drain Bias Voltage (V stress rating only; functional operation of the product at these DD1A to VDD4A) 4.5 V Gate Bias Voltage (V or any other conditions above those indicated in the GG1B) −2 V to 0 V dc RF Input Power (RFIN) 22 dBm operational section of this specification is not implied. Channel Temperature 175°C Operation beyond the maximum operating conditions for Continuous Power Dissipation (P extended periods may affect product reliability. DISS), 1.770 W T A = 85°C (Derate 19.2 mW/°C Above 85°C) Thermal Resistance, θ ESD CAUTION JA (Channel to 50.83°C/W Bottom Die) Storage Temperature Range −65°C to +150°C Operating Temperature Range −55°C to +85°C ESD Sensitivity, Human Body Model (HBM) ±125 V, Class 0B Rev. D | Page 5 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY ELECTRICAL SPECIFICATIONS 35 GHz TO 40 GHz FREQUENCY RANGE 40 GHz TO 50 GHz FREQUENCY RANGE 50 GHz TO 70 GHz FREQUENCY RANGE ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION ALTERNATE BIASING CONFIGURATION MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS Handling Precautions Mounting Wire Bonding TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE
