link to page 13 link to page 13 link to page 7 HMC7229Data SheetPIN CONFIGURATION AND FUNCTION DESCRIPTIONS23456VVVVGG1DD1VDD2DD3DD4VREF 7HMC72291 RFINRFOUT 8VDET 9VVVVGG2DD5VDD6DD7DD8 002 1413121110 14566- Figure 2. Pad Configuration Table 5. Pad Function Descriptions Pad No.MnemonicDescription 1 RFIN RF Input. This pad is ac-coupled and matched to 50 Ω. 2, 14 VGG1, VGG2 Gate Controls for the Power Amplifier. Adjust the VGG1 or VGG2 supply voltage to achieve recommended bias current. External 100 pF, 10 nF, and 4.7 μF bypass capacitors are required. 3 to 6, 10 to 13 VDD1 to VDD8 Drain Bias Voltages. External 100 pF, 10 nF, and 4.7 μF bypass capacitors are required. 7 VREF DC Voltage of the Diode. This pad is biased through an external detector circuit used for temperature compensation of VDET (see Figure 35). 8 RFOUT RF Output. This pin is ac-coupled and matched to 50 Ω. 9 VDET DC Voltage Representing the RF Output Power. This pad is rectified by the diode that is biased through an external resistor (see Figure 35). Die Bottom GND Die Bottom. The die bottom must be connected to RF/dc ground. See Figure 9 for the interface schematic. Rev. D | Page 6 of 16 Document Outline Features Applications General Description Functional Block Diagram Table of Contents Revision History Specifications 33 GHz to 35 GHz Frequency Range 35 GHz to 37 GHz Frequency Range 37 GHz to 40 GHz Frequency Range Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Biasing Procedures Typical Application Circuit Mounting and Bonding Techniques for Millimeter Wave GaAs MMICs Handling Precautions Mounting Eutectic Die Attach Epoxy Die Attach Wire Bonding Assembly Diagram Outline Dimensions Ordering Guide
