HMC1087 v05.1217 8 WATT GaN MMIC POWER AMPLIFIER,2 - 20 GHzPad Descriptions Pad Number Function Description Interface Schematic IP H RFIN This pad is DC coupled and is matched to 50 Ohms. 1 RFIN External blocking capacitor is required VGG R - C E W RFIN O Gate Bias 2 VGG (Internally isolated from RFIN) VGG R & P A E This pad is DC coupled and is matched to 50 Ohms. 3 RFOUT External blocking capacitor is required. IN S - L R Drain Bias 4 VDD (Internally isolated from RFOUT) IE LIF P Die Bottom GND Die bottom must be connected to RF/DC ground. M A For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 7 Application Support: Phone: 1-800-ANALOG-D Document Outline Features General Description Functional Diagram Electrical Specifications Gain and Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature Gain vs. Bias Pout vs. Frequency Power Gain vs. Frequency Power Added Efficiency vs. Pin Pout vs. Pin P3dB vs. Temperature P3dB vs. DC Bias Psat vs. Temperature Psat vs. DC Bias IDS vs. Pin OIP3 vs. Frequency IM3 vs. Pout/Tone Reverse Isolation vs. Temperature Power Dissipation vs. Pin Second Harmonic Absolute Maximum Ratings[1] Outline Drawing Die Packaging Information Pad Descriptions Bookmark 28 Assembly Diagram Mounting & Bonding Techniques for GaN MMICs
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