HMC409LP4E v04.1217 GaAs InGaP HBT 1 WATTPOWER AMPLIFIER, 3.3 - 3.8 GHzApplication Circuit T m s r - e w o p E r & A e lin s - r ie lif p m A recommended Component Values Tl1 Tl2 Tl3 C1 - C5 100 pf impedance 50 ohm 27 ohm 50 ohm C6 - C7 1000 pf physical length 0.068” 0.062” 0.164” C8 10 pf electrical length 12˚ 11˚ 29˚ C9 0.5 pf pCB material: 10 mil rogers 4350, er = 3.48 C10 1.6 pf C11 4.7µf l1, l2 3.9 nH l3 2.2 nH r1 56 ohm For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 6 Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications EVM vs. Temperature @ 3.5 GHz OFDM 54 Mbps Signal Power Dissipation Gain, Power & Quiescent Supply Current vs. Vpd @ 3.5 GHz Noise Figure vs. Temperature Gain & Power vs. Supply Voltage Power Compression @ 3.5 GHz Output IP3 vs. Temperature Psat vs. Temperature P1dB vs. Temperature Power Down Isolation vs. Temperature Reverse Isolation vs. Temperature Output Return Loss vs. Temperature Input Return Loss vs. Temperature Gain vs. Temperature Broadband Gain & Return Loss Absolute Maximum Ratings Typical Supply, Current vs. Supply Voltage, Vcc1 = Vcc2 = Vpd Outline Drawing Package Information Application Circuit Pin Descriptions Evaluation PCB List of Materials
