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Datasheet HMC414MS8G, 414MS8GE (Analog Devices) - 3

ПроизводительAnalog Devices
ОписаниеGaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz
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Язык документаанглийский

HMC414MS8G / 414MS8GE. GaAs InGaP HBT MMIC. POWER AMPLIFIER, 2.2 - 2.8 GHz. Psat vs. Temperature, Vs= 3.6V

HMC414MS8G / 414MS8GE GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Psat vs Temperature, Vs= 3.6V

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HMC414MS8G / 414MS8GE
v04.0607
GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Psat vs. Temperature, Vs= 3.6V Psat vs. Temperature, Vs= 5V
32 32 28 28 24 24 20 20 16 16 11 +25 C +25 C +85 C +85 C Psat (dBm) 12 -40 C Psat (dBm) 12 -40 C 8 8 4 4 T 0 0 2 2.2 2.4 2.6 2.8 3 2 2.2 2.4 2.6 2.8 3 FREQUENCY (GHz) FREQUENCY (GHz) - SM S
Power Compression@ 2.4 GHz, Vs= 3.6V Power Compression@ 2.4 GHz, Vs= 5V
36 36 Pout Pout 30 Gain 30 Gain PAE PAE PLIFIER 24 24 M 18 18 12 12 ER A 6 6 W Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) O 0 0 -14 -9 -4 1 6 11 16 -14 -9 -4 1 6 11 16 INPUT POWER (dBm) INPUT POWER (dBm) & P R A
Output IP3 vs. Temperature, Vs= 3.6V Output IP3 vs. Temperature, Vs= 5V
E 42 42 LIN 37 37 32 32 +25 C +25 C 27 +85 C 27 +85 C -40 C -40 C IP3 (dBm) IP3 (dBm) 22 22 17 17 12 12 2 2.2 2.4 2.6 2.8 3 2 2.2 2.4 2.6 2.8 3 FREQUENCY (GHz) FREQUENCY (GHz) Information furnish F e o d r pri by An ce, de alog Devic leis vie s rbyeli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. : 978 Phon -e25 : 7 0 81 -3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73
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