Datasheet B2045G, B20200G (Thinki Semiconductor)

B2045G thru B20200G
B2045G thru B20200G Pb
Pb Free Plating Product 20.0 Ampere Surface Mount Dual Common Cathode Schottky Barrier Rectifiers D2PAK/TO-263AB Unit : inch (mm) ThinkiSemi Planar Schottky Technology ¬ ¬ Good Soft Recovery Characteris tics
Features
¬ Ideally Suited for Automatic Assembly ¬ Low Forward Voltage ¬ High Surge Current Capability ¬ Low Leakage Current ¬ Freewheeling, Snubber, Clamp ¬ Inversion Welder ¬ PFC
Applications
Plating Pow ¬ er Supply ¬ Ultrasonic Cleaner and Welder Case Case Case Case ¬ Converter & Chopper Positive Negative Doubler Series ¬ Tandem Polarity Tandem Polarity UPS/LED SMPS/HID Common Cathode Common Anode Suffix "G" Suffix "RG" Suffix "DG" Suffix "SG"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted)
PARAMETER SYMBOL B2045G B2060G B20100G B20150G B20200G Unit
Marking code B2045G B2060G B20100G B20150G B20200G Maximum repetitive peak reverse voltage VRRM 45 60 100 150 200 V Maximum RMS voltage VRMS 31 42 70 105 140 V Maximum DC blocking voltage VDC 45 60 100 150 200 V Maximum average forward rectified current IF(AV) 20 A Peak repetitive forward current IFRM 20 A (Rated VR, Square wave, 20KHz) Peak forward surge current, 8.3 ms single half sine-wave IFSM 150 A superimposed on rated load Peak repetitive reverse surge current (Note 1) IRRM 1 0.5 A Maximum instantaneous forward voltage (Note 2) IF=10A, TJ=25°C VF 0.70 0.80 0.85 0.99 V IF=10A, TJ=125°C 0.60 0.70 0.75 0.87 Maximum reverse current @ rated VR T 0.1 J=25°C IR mA TJ=125°C 15 10 5 Voltage rate of change (Rated VR) dV/dt 10000 V/μs Typical thermal resistance RθJC 1.5 2 °C/W Operating junction temperature range TJ - 55 to +150 °C Storage temperature range TSTG - 55 to +150 °C Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle Rev.10T Page 1/2 © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/