AC-DC и DC-DC преобразователи напряжения Top Power на складе ЭЛТЕХ

Datasheet STFW4N150, STP4N150, STW4N150 (STMicroelectronics) - 9

ПроизводительSTMicroelectronics
ОписаниеN-channel 1500 V, 5 Ω, 4 A, PowerMESH Power MOSFET in TO-220, TO-247, TO-3PF
Страниц / Страница15 / 9 — STFW4N150, STP4N150, STW4N150. Test circuits. Figure 19. Switching times …
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Язык документаанглийский

STFW4N150, STP4N150, STW4N150. Test circuits. Figure 19. Switching times test circuit for

STFW4N150, STP4N150, STW4N150 Test circuits Figure 19 Switching times test circuit for

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Транзисторы разные.Тип: MOSFETТип проводимости: NМаксимальное напряжение сток-исток, В: 1500Максимальный ток стока (при Ta=25C), А: 4Минимальное сопротивление открытого канала, мОм: 70Емкость, пФ:...
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STFW4N150, STP4N150, STW4N150 Test circuits 3 Test circuits Figure 19. Switching times test circuit for Figure 20. Gate charge test circuit resistive load
VDD 12V 47kΩ 1kΩ 100nF R 2200 3.3 L µF µF VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. µF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1
Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit
L A A A D FAST L=100µH VD G D.U.T. DIODE 2200 3.3 µF µF VDD S B 3.3 1000 B B µF µF 25 Ω VDD D ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1
Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform
V t (BR)DSS on toff tr tf V tdon tdoff D 90% 90% IDM 10% I 10% VDS D 0 VDD VDD 90% VGS AM01472v1 10% 0 AM01473v1 Doc ID 11262 Rev 9 9/15 Document Outline Figure 1. Internal schematic diagram. Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data Table 4. Avalanche characteristics 2 Electrical characteristics Table 5. On/off states Table 6. Dynamic Table 7. Source drain diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 4. Safe operating area for TO-3PF Figure 5. Thermal impedance for TO-3PF Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 Figure 8. Output characteristics Figure 9. Transfer characteristics Figure 10. Transconductance Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature Figure 18. Maximum avalanche energy vs temperature 3 Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit Figure 21. Test circuit for inductive load switching and diode recovery times Figure 22. Unclamped inductive load test circuit Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform 4 Package mechanical data 5 Revision history Table 8. Document revision history
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