Datasheet 2N3439, 2N3440 (STMicroelectronics) - 2

2N3439 / 2N3440 THERMAL DATA
R o thj-case Thermal Resistance Junction-case Max 17.5 C/W R o thj-amb Thermal Resistance Junction-ambient Max 175 C/W
ELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off for
2N3439
VCB = 360 V 20 µA Current (IE = 0) for
2N3440
VCB = 250 V 20 µA ICEO Collector Cut-off for
2N3439
VCE = 300 V 20 µA Current (IB = 0) for
2N3440
VCE = 200 V 50 µA ICEX Collector Cut-off for
2N3439
VCE = 450 V 500 µA Current (VBE = -1.5V) for
2N3440
VCE = 300 V 500 µA IEBO Emitter Cut-off Current VEB = 6 V 20 µA (IC = 0) VCEO(sus)∗ Collector-Emitter IC = 50 mA Sustaining Voltage for
2N3439
350 V for
2N3440
250 V VCE(sat)∗ Collector-Emitter IC = 50 mA IB = 4 mA 0.5 V Saturation Voltage VBE(sat)∗ Base-Emitter IC = 50 mA IB = 4 mA 1.3 V Saturation Voltage hFE∗ DC Current Gain IC = 20 mA VCE = 10 V 40 160 IC = 2 mA VCE = 10 V for
2N3439
30 hFE Small Signal Current IC = 5 mA VCE = 10 V f = 1KHz 25 Gain fT Transition frequency IC = 5 mA VCE = 10 V f = 5MHz 15 MHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4