Datasheet BSS89 (Infineon) - 2
| Производитель | Infineon |
| Описание | SIPMOS Small-Signal-Transistor |
| Страниц / Страница | 8 / 2 — Rev. 2.2. BSP89. Thermal Characteristics Parameter. Symbol. Values. Unit. … |
| Версия | 02_02 |
| Формат / Размер файла | PDF / 668 Кб |
| Язык документа | английский |
Rev. 2.2. BSP89. Thermal Characteristics Parameter. Symbol. Values. Unit. min. typ. max. Characteristics. Electrical Characteristics
7 предложений от 7 поставщиков SIPMOS Small-Signal Transistor |
| BSS92
Infineon | 34 ₽ | |
| 5SGXMA5N3F45I3N
Altera | 660 810 ₽ | |
| BSS89/SIE
Infineon | по запросу | |
| BSS89
Infineon | по запросу | |
Модельный ряд для этого даташита
Текстовая версия документа
Rev. 2.2 BSP89 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics
Thermal resistance, junction - soldering point RthJS - - 25 K/W (Pin 4) SMD version, device on PCB: RthJA @ min. footprint - - 115 @ 6 cm2 cooling area 1) - - 70
Electrical Characteristics
, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit min. typ. max. Static Characteristics
Drain-source breakdown voltage V(BR)DSS 240 - - V VGS=0, ID=250µA Gate threshold voltage, VGS = VDS VGS(th) 0.8 1.4 1.8 ID=108µA Zero gate voltage drain current IDSS µA VDS=240V, VGS=0, Tj=25°C - - 0.1 VDS=240V, VGS=0, Tj=150°C - - 10 Gate-source leakage current IGSS - - 10 nA VGS=20V, VDS=0 Drain-source on-state resistance RDS(on) - 4.9 7.5 W VGS=4.5V, ID=0.32A Drain-source on-state resistance RDS(on) - 4.2 6 VGS=10V, ID=0.35A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2012-11-29
