Datasheet 2N6058 (ON Semiconductor)

ПроизводительON Semiconductor
ОписаниеDarlington Complementary Silicon Power Transistors
Страниц / Страница7 / 1 — *ON Semiconductor Preferred Device. These devices are available in …
Формат / Размер файлаPDF / 180 Кб
Язык документаанглийский

*ON Semiconductor Preferred Device. These devices are available in Pb−free package(s). Specifications herein. DARLINGTON

Datasheet 2N6058 ON Semiconductor

21 предложений от 13 поставщиков
Биполярный транзистор, дарлингтона, NPN, 80 В, 4 МГц, 150 Вт, 12 А, 750 hFE
TMElectronics
Россия
2N6058
CDIL
от 146 ₽
ЭИК
Россия
2N6058
от 153 ₽
ТаймЧипс
Россия
SX2N6058
по запросу
2N6058/FSC
по запросу
Держим старые цены на MEAN WELL весь июль!

Модельный ряд для этого даташита

Текстовая версия документа

www.DataSheet4U.com ON Semiconductort PNP Darlington Complementary 2N6052* Silicon Power Transistors . designed for general−purpose amplifier and low frequency NPN switching applications. 2N6058 • High DC Current Gain — h * FE = 3500 (Typ) @ IC = 5.0 Adc 2N6059 • Collector−Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 80 Vdc (Min) — 2N6058
*ON Semiconductor Preferred Device
100 Vdc (Min) — 2N6052, 2N6059 • Monolithic Construction with Built−In Base−Emitter Shunt Resistors w
These devices are available in Pb−free package(s). Specifications herein DARLINGTON apply to both standard and Pb−free devices. Please see our website at 12 AMPERE www.onsemi.com for specific Pb−free orderable part numbers, or COMPLEMENTARY contact your local ON Semiconductor sales office or representative. SILICON MAXIMUM RATINGS (1) POWER TRANSISTORS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
80−100 VOLTS 2N6052
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ
150 WATTS Rating Symbol 2N6058 2N6059 Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ Collector−Emitter Voltage VCEO 80 100 Vdc ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ Collector−Base Voltage ÎÎÎÎ VCB 80 ÎÎÎÎ 100 Vdc ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ Emitter−Base voltage ÎÎÎÎ V ÎÎÎÎÎÎÎ EB 5.0 Vdc ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ Collector Current — Continuous I ÎÎÎÎÎÎÎ C 12 Adc Peak 20 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current IB 0.2 Adc ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ Total Device Dissipation P
CASE 1−07
D 150 Watts
TO−204AA
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ @T ÎÎÎÎÎÎÎ C = 25_C
(TO−3)
Derate above 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 0.857 ÎÎ W/_C ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ Operating and Storage Junction TJ, Tstg ÎÎÎÎÎÎÎ –65 to +200_C _C Temperature Range ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Rating Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ Thermal Resistance, Junction to Case RθJC 1.17 _C/W ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ (1) Indicates JEDEC Registered Data. ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ 160 140 TTS) A 120 (W 100 TION A 80 60 40 , POWER DISSIP DP 20 0 0 25 50 75 100 125 150 175 200 TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating Preferred
devices are ON Semiconductor recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
March, 2006 − Rev. 3 2N6052/D
ADAR3000/3001 16-канальный формирователь диаграммы направленности для К/Ка диапазона частот от Analog Devices