Datasheet 2N6027, 2N6028 (ON Semiconductor)

link to page 5 2N6027, 2N6028
Preferred Device
Programmable Unijunction Transistor
Programmable Unijunction Transistor Triggers http://onsemi.com
Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting
PUTs
two resistor values. Application includes thyristor−trigger, oscillator,
40 VOLTS, 300 mW
pulse and timing circuits. These devices may also be used in special thyristor applications due to the availability of an anode gate. Supplied in an inexpensive TO−92 plastic package for high−volume G requirements, this package is readily adaptable for use in automatic A K insertion equipment.
Features
• Programmable − RBB, h, IV and IP • Low On−State Voltage − 1.5 V Maximum @ IF = 50 mA
TO−92 (TO−226AA)
• Low Gate to Anode Leakage Current − 10 nA Maximum
CASE 029
• High Peak Output Voltage − 11 V Typical
STYLE 16
1 • 2 Low Offset Voltage − 0.35 V Typical (R 3 G = 10 kW) • Pb−Free Packages are Available*
MARKING DIAGRAM
2N 602x AYWW G G 2N602x = Device Code x = 7 or 8 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
PIN ASSIGNMENT
1 Anode 2 Gate 3 Cathode
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques
Preferred
devices are recommended choices for future use Reference Manual, SOLDERRM/D. and best overall value. © Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
May, 2006 − Rev.6 2N6027/D