Datasheet 2N6027, 2N6028 (ON Semiconductor) - 2

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2N6027, 2N6028 MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Power Dissipation* PF 300 mW Derate Above 25°C 1/qJA 4.0 mW/°C DC Forward Anode Current* IT 150 mA Derate Above 25°C 2.67 mA/°C DC Gate Current* IG "50 mA Repetitive Peak Forward Current ITRM A 100 ms Pulse Width, 1% Duty Cycle 1.0 20 ms Pulse Width, 1% Duty Cycle* 2.0 Non−Repetitive Peak Forward Current ITSM 5.0 A 10 ms Pulse Width Gate to Cathode Forward Voltage* VGKF 40 V Gate to Cathode Reverse Voltage* VGKR *5.0 V Gate to Anode Reverse Voltage* VGAR 40 V Anode to Cathode Voltage* (Note 1) VAK ±40 V Capacitive Discharge Energy (Note 2) E 250 mJ Power Dissipation (Note 3) PD 300 mW Operating Temperature TOPR −50 to +100 °C Junction Temperature TJ −50 to +125 °C Storage Temperature Range Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *Indicates JEDEC Registered Data 1. Anode positive, RGA = 1000 W Anode negative, RGA = open 2. E = 0.5 CV2 capacitor discharge energy limiting resistor and repetition. 3. Derate current and power above 25°C.
THERMAL CHARACTERISTICS Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 75 °C/W Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Maximum Lead Temperature for Soldering Purposes TL 260 °C (t1/16″ from case, 10 seconds maximum)
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