1N914 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETERTEST CONDITIONSYMBOLMIN.TYP.MAX.UNIT Forward voltage IF = 10 mA VF 1 V Breakdown voltage IR = 100 μA V(BR) 100 V VR = 75 V IR 5 μA Peak reverse current VR = 20 V, Tj = 150 °C IR 50 μA VR = 20 V IR 25 nA Diode capacitance VR = 0, f = 1 MHz CD 4 pF I Reverse recovery time F = 10 mA, iR = 1 mA, VR = 6 V, RL = 100 Ω trr 4 ns TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 1000 1N914 100 T = 25 °C j 100 Scattering Limit 10 Scattering Limit 10 1 - Forward Current (mA) - Reverse Current (nA) I F I R T = 25 °C j 0.1 1 0 0.4 0.8 1.2 1.6 2.0 10 1 100 94 9170_1 V 94 9098 V - Reverse Voltage (V) F - Forward Voltage (V) R Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Reverse Current vs. Reverse Voltage PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH) Cathode Identification ] ] 24] 7 0 .0 .015] 6 5 [0 .0 .0 [0 26 min. [1.024] 3.9 max. [0.154] 26 min. [1.024] 0 0 x. [ [ a in. 7 3 1. 1. 3.1 min. [0.120] 6 m 4 m 0. 0. Ø Ø Rev. 6 - Date: 19. December 2011 Document no.: SB-V-3906.04-031(4) 94 9366 Rev. 2.0, 24-Feb-2020 2 Document Number: 85622 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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