SD101A, SD101B, SD101C www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETERTEST CONDITIONPARTSYMBOLMIN.TYP.MAX.UNIT SD101A V(BR) 60 V Reverse breakdown voltage IR = 10 μA SD101B V(BR) 50 V SD101C V(BR) 40 V VR = 50 V SD101A IR 200 nA Leakage current VR = 40 V SD101B IR 200 nA VR = 30 V SD101C IR 200 nA SD101A VF 410 mV IF = 1 mA SD101B VF 400 mV SD101C VF 390 mV Forward voltage drop SD101A VF 1000 mV IF = 15 mA SD101B VF 950 mV SD101C VF 900 mV SD101A CD 2.0 pF Diode capacitance VR = 0 V, f = 1 MHz SD101B CD 2.1 pF SD101C CD 2.2 pF TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 100 10.00 T = 125 °C j 10 T = 100 °C 1.00 j rrent (mA) u 1 T = 75 °C j e Current (μA) s ard C T = 50 °C w j 0.10 - Rever 0.1 - For I R I F T = 25 °C j 0.01 0.01 0 5 10 15 20 25 30 35 40 45 50 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 16204 V - Reverse Voltage (V) 16206 V - Forward Voltage (V) R F Fig. 1 - Reverse Current vs. Reverse Voltage Fig. 3 - Forward Current vs. Forward Voltage 2.0 1.8 T = 25 °C j 1.6 1.4 1.2 1.0 0.8 0.6 - Diode Capacitance (pF) D 0.4 C 0.2 0.0 0 5 10 15 20 25 30 35 40 45 50 16205 V - Reverse Voltage (V) R Fig. 2 - Diode Capacitance vs. Reverse Voltage Rev. 1.8, 01-Jun-17 2 Document Number: 85629 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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