Datasheet PSMNR55-40SSH (Nexperia) - 3

link to page 4 link to page 4 link to page 3 link to page 4 link to page 3 link to page 5 link to page 5 link to page 3
Nexperia PSMNR55-40SSH N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology 8. Limiting values Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - 40 V VDSM peak drain-source tp ≤ 20 ns; f ≤ 500 kHz; EDS(AL) ≤ 200 nJ; - 45 V voltage pulsed VDGR drain-gate voltage 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ - 40 V VGS gate-source voltage DC; Tj = 175 °C -20 20 V Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 375 W ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 [1] - 500 A IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 2237 A Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering - 260 °C temperature
Source-drain diode
IS source current Tmb = 25 °C [1] - 500 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 2237 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain- ID = 120 A; Vsup ≤ 40 V; RGS = 50 Ω; - 1375 mJ source avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 4 IAS non-repetitive avalanche Vsup = 40 V; VGS = 10 V; Tj(init) = 25 °C; [2] - 315 A current RGS = 50 Ω; Fig. 4 [1] 500A continuous current has been successfully demonstrated during application. Practically the current will be limited by PCB, thermal design and operating temperature. [2] Protected by 100% test. PSMNR55-40SSH All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 6 April 2021 3 / 14
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents