Datasheet PSMNR55-40SSH (Nexperia) - 7

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Nexperia PSMNR55-40SSH N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology Symbol Parameter Conditions Min Typ Max Unit
QGS gate-source charge ID = 25 A; VDS = 32 V; VGS = 10 V; - 51 77 nC Q Fig. 15; Fig. 16 GD gate-drain charge - 32 65 nC Ciss input capacitance VDS = 25 V; VGS = 0 V; f = 1 MHz; - 15116 21162 pF C T oss output capacitance j = 25 °C; Fig. 17 - 2718 3805 pF Crss reverse transfer - 544 1197 pF capacitance td(on) turn-on delay time VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; - 40 - ns t R r rise time G(ext) = 5 Ω - 33 - ns td(of ) turn-of delay time - 117 - ns tf fall time - 48 - ns Qoss output charge VGS = 0 V; VDS = 25 V; f = 1 Hz; - 121 - nC Tj = 25 °C
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 18 - 0.79 1 V trr reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; - 62 - ns Q V r recovered charge DS = 20 V; Tj = 25 °C [1] - 93 - nC ta reverse recovery rise - 29 - ns time tb reverse recovery fall - 24 - ns time [1] includes capacitive recovery aaa-032615 400 aaa-032616 4 ID RD R S D o S n o (A) A 5 5 V (m ( Ω m ) 320 VG V S G = = 5. 5 5 5 V 3 240 6 6 V 2 4. 4 5 . 5 V 160 10 1 0 V 1 80 4 4 V 0 0 0 1 2 3 4 0 4 8 12 16 20 VDS (V) VGS (V) Tj = 25 °C Tj = 25 °C; ID = 25A
Fig. 8. Output characteristics; drain current as a Fig. 9. Drain-source on-state resistance as a function function of drain-source voltage; typical values of gate-source voltage; typical values
PSMNR55-40SSH All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 6 April 2021 7 / 14
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents