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Datasheet PSMNR55-40SSH (Nexperia) - 8

ПроизводительNexperia
ОписаниеN-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology
Страниц / Страница14 / 8 — Nexperia. PSMNR55-40SSH. N-channel 40 V, 0.55 mOhm, 500 Amps continuous, …
Версия06042021
Формат / Размер файлаPDF / 335 Кб
Язык документаанглийский

Nexperia. PSMNR55-40SSH. N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using

Nexperia PSMNR55-40SSH N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using

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Текстовая версия документа

Nexperia PSMNR55-40SSH N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology
aaa-032617 400 aaa-018138 10-1 ID ID (A) A (A ( ) A 10-2 300 Min Ty T p y Ma M x a 10-3 200 17 1 5 7 °C ° 10-4 100 10-5 25 2 ° 5 C ° Tj T = - 5 - 5° 5 C ° 0 10-6 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 VGS (V) VGS (V) Tj = 25 °C; VDS = 8 V Tj = 25 °C; VDS = 5 V
Fig. 10. Transfer characteristics; drain current as a Fig. 11. Sub-threshold drain current as a function of function of gate-source voltage; typical values gate-source voltage
aaa-018139 5 aaa-032618 4 VGS( S t(h) h RD R S D o S n o (V) V (m ( Ω m ) 4. 4 5 5 V 4 3.2 Max a 3 Ty T p 2.4 2 1.6 Min 7 7 V 6 6 V 5. 5 5 . 5 V 5 5 V 1 0.8 VGS = 1 0 1 0 V 0 0 -60 -30 0 30 60 90 120 150 180 0 80 160 240 320 400 Tj (°C) ID (A) ID = 1 mA ; VDS = VGS Tj = 25 °C
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Drain-source on-state resistance as a function junction temperature of drain current; typical values
PSMNR55-40SSH All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 6 April 2021 8 / 14
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents
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