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Datasheet STB9NK90Z, STF9NK90Z, STP9NK90Z, STW9NK90Z (STMicroelectronics) - 10

ПроизводительSTMicroelectronics
ОписаниеN-channel 900 V, 1.1 Ω, 8 A, TO-220, TO-220FP, D2PAK, TO-247 Zener-protected SuperMESH Power MOSFET
Страниц / Страница17 / 10 — Package mechanical data. STB9NK90Z, STF9NK90Z, STP9NK90Z, STW9NK90Z
Формат / Размер файлаPDF / 1.0 Мб
Язык документаанглийский

Package mechanical data. STB9NK90Z, STF9NK90Z, STP9NK90Z, STW9NK90Z

Package mechanical data STB9NK90Z, STF9NK90Z, STP9NK90Z, STW9NK90Z

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MOSFET N-CH 900V 8A TO-220. N-Channel 900V 8A (Tc) 160W (Tc) Through Hole TO-220AB. Transistors - FETs, MOSFETs - Single
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STP9NK90Z
STMicroelectronics
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STP9NK90Z
STMicroelectronics
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STP9NK90Z
STMicroelectronics
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STMicroelectronics
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Package mechanical data STB9NK90Z, STF9NK90Z, STP9NK90Z, STW9NK90Z 4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/17 Doc ID 9479 Rev 7 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data Table 4. Avalanche characteristics 2 Electrical characteristics Table 5. On/off states Table 6. Dynamic Table 7. Switching times Table 8. Source drain diode Table 9. Gate-source Zener diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, D·PAK Figure 3. Thermal impedance for TO-220, D·PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 Figure 8. Output characteristics Figure 9. Transfer characteristics Figure 10. Transconductance Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature Figure 18. Maximum avalanche energy vs temperature 3 Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit Figure 21. Test circuit for inductive load switching and diode recovery times Figure 22. Unclamped Inductive load test circuit Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform 4 Package mechanical data Table 10. TO-220FP mechanical data Figure 25. TO-220FP drawing 5 Packaging mechanical data 6 Revision history Table 11. Revision history
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